CY7C1381D-133BGXC Cypress Semiconductor Corp, CY7C1381D-133BGXC Datasheet - Page 15

• Manufacturer Part Number: CY7C1381D-133BGXC
• Description: IC SRAM 18MBIT 133MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1381D-133BGXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05544 Rev. *A
Identification Codes
EXTEST
IDCODE
SAMPLE Z
RESERVED
SAMPLE/PRELOAD
RESERVED
RESERVED
BYPASS
Instruction
Code
000
001
010
011
100
101
110
111
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state.
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
Do Not Use: This instruction is reserved for future use.
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
PRELIMINARY
Description
CY7C1381D
CY7C1383D
Page 15 of 29