LH28F160BJE-BTL90 Sharp Microelectronics, LH28F160BJE-BTL90 Datasheet - Page 5

• Manufacturer Part Number: LH28F160BJE-BTL90
• Description: IC FLASH 16MBIT 90NS 48TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F160BJE-BTL90

• Rohs Status: RoHS non-compliant
• Format - Memory: FLASH
• Memory Type: Boot Block FLASH
• Memory Size: 16M (2M x 8 or 1M x 16)
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Other names: 425-1823; LHF16J06

■ Low Voltage Operation
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Read Access Time
■ Operating Temperature
■ Low Power Management
■ Optimized Array Blocking Architecture
■ Extended Cycling Capability
SHARP’s LH28F160BJE-BTL90 Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a wide
range of applications.
LH28F160BJE-BTL90 can operate at V
capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the LH28F160BJE-BTL90 offers four levels of protection: absolute protection with V
hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code
security needs.
The LH28F160BJE-BTL90 is manufactured on SHARP’s 0.25µm ETOX
package: the 48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
sharp
V
90ns(V
0°C to +70°C
Typ. 2µA (V
Automatic Power Savings Mode Decreases I
Static Mode
Typ. 120µA (V
Read Current
Two 4K-word (8K-byte) Boot Blocks
Six 4K-word (8K-byte) Parameter Blocks
Thirty-one 32K-word (64K-byte) Main Blocks
Bottom Boot Location
Minimum 100,000 Block Erase Cycles
CC
=V
CC
CCW
=2.7V-3.6V)
=2.7V-3.6V Single Voltage
CC
CC
=3.0V) Standby Current
=3.0V, T
16M-BIT ( 1Mbit ×16 / 2Mbit ×8 )
A
Boot Block Flash MEMORY
=+25°C, f=32kHz)
CC
LH28F160BJE-BTL90
=2.7V-3.6V and V
CCR
LHF16J06
in
CCW
■ Enhanced Automated Suspend Options
■ Enhanced Data Protection Features
■ Automated Block Erase, Full Chip Erase,
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened
=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation
Word/Byte Write and Lock-Bit Configuration
TM*
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Absolute Protection with V
Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
Command User Interface (CUI)
Status Register (SR)
48-Lead TSOP
TM*
process technology. It come in industry-standard
Nonvolatile Flash Technology
CCW
CCW
≤V
≤V
CCWLK
CCWLK
, selective
Rev. 1.26
2