LH52256C-70LL Sharp Microelectronics, LH52256C-70LL Datasheet - Page 5

• Manufacturer Part Number: LH52256C-70LL
• Description: IC SRAM 256KBIT 70NS 28DIP
• Manufacturer: Sharp Microelectronics

Specifications of LH52256C-70LL

• Rohs Status: RoHS non-compliant
• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 256K (32K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-DIP (0.600", 15.24mm)
• Other names: 425-1833-5

CMOS 256K (32K
WRITE CYCLE (T
NOTE:
1. Active output to high-impedance and high-impedance to output active tests specified for a 200 mV
CAPACITANCE (T
NOTE:
1. This parameter is sampled and not production tested.
DATA RETENTION CHARACTERISTICS (T
NOTE:
1. t
2. Typical values at T
Write cycle time
CE Low to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Input data setup time
Input data hold time
WE High to output active
WE Low to output in High
impedance
OE High to output in High
impedance
Input capacitance
I/O capacitance
Data retention supply voltage
Data retention supply current
Chip enable setup time
Chip enable hold time
transition from steady state levels into the test load.
RC
PARAMETER
= Read cycle time.
PARAMETER
PARAMETER
A
= 25 C
8) Static RAM
A
SYMBOL
A
= 0 C to +70 C, V
C
C
= 25 C, f = 1MHz)
I/O
IN
SYMBOL
SYMBOL
V
I
CONDITIONS
CCDR
t
CCDR
CDR
t
t
V
t
t
t
t
t
t
t
t
t
V
t
OHZ
OW
WC
CW
AW
WP
WR
DW
R
DH
WZ
AS
I/O
IN
= 0 V
= 0 V
CE
MIN.
V
CC
70
45
45
35
30
0
0
0
5
0
0
CCDR
V
CE
CCDR
MIN.
= 4.5 V to 5.5 V)
= 3.0 V
CONDITIONS
A
V
– 0.2 V
MAX.
CCDR
= 0 C to +70 C)
30
30
TYP.
– 0.2 V
TA = 40 C
T
UNIT
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MAX.
= 25 C
10
7
NOTE
UNIT
1
1
1
pF
pF
MIN.
2.0
t
RC
0
TYP.
NOTE
0.3
1
1
MAX.
5.5
1.0
3.0
15
LH52256C/CH
UNIT
ns
ns
V
A
NOTE
1
5