CY7C1329-100AC Cypress Semiconductor Corp, CY7C1329-100AC Datasheet - Page 9

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CY7C1329-100AC

Manufacturer Part Number
CY7C1329-100AC
Description
IC SRAM 2MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1329-100AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
2M (64K x 32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1090

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1329-100AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1329-100AC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY7C1329-100ACT
Manufacturer:
CY
Quantity:
1 000
Part Number:
CY7C1329-100ACT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Document #: 38-05279 Rev. *A
Switching Waveforms
Write Cycle Timing
Notes:
14. WE is the combination of BWE, BW
15. WDx stands for Write Data to Address X.
ADD
CE
CE
ADSC
ADV
WE
CE
OE
CLK
ADSP
GW
Data-
In
1
3
2
t
t
t
CES
ADS
CES
t
AS
High-Z
t
CES
WD1
[14, 15]
t
ADVS
t
t
t
Single Write
ADH
CEH
t
ADS
DS
ADV Must Be Inactive for ADSP Write
t
t
CYC
t
t
CEH
t
CEH
AH
WS
1a
1a
t
t
t
[3:0]
ADVH
WH
t
DH
ADH
and GW to define a Write cycle (see Write Cycle Descriptions table).
WD2
t
CH
= UNDEFINED
t
WS
t
CL
2a
t
WH
Burst Write
ADSP ignored with CE
2b
CE
1
masks ADSP
= DON’T CARE
2c
1
inactive
2d
ADSC initiated Write
WD3
3a
Pipelined Write
Unselected with CE
High-Z
Unselected
2
CY7C1329
Page 9 of 15

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