CY7C1329-100AC Cypress Semiconductor Corp, CY7C1329-100AC Datasheet - Page 6

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CY7C1329-100AC

Manufacturer Part Number
CY7C1329-100AC
Description
IC SRAM 2MBIT 100MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1329-100AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
2M (64K x 32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1090

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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
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Document #: 38-05279 Rev. *A
Write Cycle Descriptions
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
Ambient Temperature with
Power Applied
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
Notes:
4.
5.
6.
7.
8.
Read
Read
Write Byte 0 – DQ
Write Byte 1 – DQ
Write Bytes 1, 0
Write Byte 2 – DQ
Write Bytes 2, 0
Write Bytes 2, 1
Write Bytes 2, 1, 0
Write Byte 3 - DQ
Write Bytes 3, 0
Write Bytes 3, 1
Write Bytes 3, 1, 0
Write Bytes 3, 2
Write Bytes 3, 2, 0
Write Bytes 3, 2, 1
Write All Bytes
Write All Bytes
X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
The SRAM always initiates a Read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to three-state. OE
is a “don't care” for the remainder of the Write cycle.
OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQ = High-Z when OE is inactive
or when the device is deselected, and DQ = data when OE is active.
Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
T
A
is the case temperature.
[7]
[31:24]
[7:0]
[15:8]
[23:16]
Function
DD
Relative to GND
[4,5,6]
0.5V to V
65°C to +150°C
55°C to +125°C
0.5V to +4.6V
DDQ
GW
+ 0.5V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
BWE
DC Input Voltage
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Commercial
X
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Range
Ambient Temperature
BW
X
X
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
3
[7]
0°C to +70°C
[3:0]
. Writes may occur only on subsequent clocks
BW
X
X
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
2
[8]
BW
5%/+10%
0.5V to V
X
X
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
3.3V
V
CY7C1329
1
DD
Page 6 of 15
DDQ
5%/+10%
BW
V
3.3V
X
X
+ 0.5V
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
DDQ
0

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