MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 50

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

AC Overshoot/Undershoot Specification
Table 25: Address and Control Balls
Applies to address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, and ODT
Table 26: Clock, Data, Strobe, and Mask Balls
Applies to DQ, DQS, DQS#, RDQS, RDQS#, UDQS, UDQS#, LDQS, LDQS#, DM, UDM, and LDM
Figure 20: Overshoot
Figure 21: Undershoot
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 20)
Maximum peak amplitude allowed for undershoot area
(see Figure 21)
Maximum overshoot area above V
Maximum undershoot area below V
Some revisions will support the 0.9V maximum average amplitude instead of the 0.5V
maximum average amplitude shown in Table 25 and Table 26.
V
V
DD
V
SS
SS
/V
/V
/V
DDQ
SSQ
DD
DDQ
SSQ
SS
SSQ
(see Figure 20)
(see Figure 21)
(see Figure 20)
(see Figure 21)
Maximum amplitude
Maximum amplitude
50
Time (ns)
Time (ns)
AC Overshoot/Undershoot Specification
0.19 Vns
0.19 Vns
0.5 Vns
0.5 Vns
-187E
0.50V
0.50V
-187E
0.50V
0.50V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Undershoot area
Overshoot area
-25/-25E
0.66 Vns
0.66 Vns
-25/-25E
0.23 Vns
0.23 Vns
0.50V
0.50V
0.50V
0.50V
Specification
Specification
0.80 Vns
0.80 Vns
0.23 Vns
0.23 Vns
-3/-3E
-3/-3E
0.50V
0.50V
0.50V
0.50V
©2004 Micron Technology, Inc. All rights reserved.
1.00 Vns
1.00 Vns
0.28 Vns
0.28 Vns
0.50V
0.50V
0.50V
0.50V
-37E
-37E
1.33 Vns
1.33 Vns
0.38 Vns
0.38 Vns
0.50V
0.50V
0.50V
0.50V
-5E
-5E