MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 26

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
When
T
When
T
C
C
≤ 0°C
≥ 85°C
I
ed by 2%; and I
I
ed by 2%; I
30%; and I
T
DD2P
DD0
C
< 85°C and the 2X refresh option is still enabled)
, I
and I
DD1
, I
DD3P(SLOW)
DD6
DD2N
DD2P
must be derated by 80% (I
26
, I
DD6
must be derated by 20%; I
DD2Q
Electrical Specifications – I
and I
must be derated by 4%; I
, I
DD3N
DD7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
, I
must be derated by 7%
512Mb: x4, x8, x16 DDR2 SDRAM
DD3P(FAST)
, I
DD4R
DD6
DD3P
, I
will increase by this amount if
DD4R
DD4W
slow must be derated by
©2004 Micron Technology, Inc. All rights reserved.
and I
, and I
DD5W
DD
DD5W
Parameters
must be derat-
must be derat-