MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 14

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Figure 7: 84-Ball FBGA – x16 Ball Assignments (Top View)
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
M
A
D
G
H
K
N
B
C
R
E
F
L
P
J
DQ14
DQ12
V
V
V
DQ6
DQ4
V
V
RFU
V
V
DDQ
DDQ
DDL
1
DD
DD
DD
SS
V
V
V
V
DQ9
DQ1
V
CKE
BA0
A10
A12
NC
NC
A3
A7
2
SSQ
SSQ
SSQ
SSQ
REF
DQ11
V
V
UDM
LDM
DQ3
WE#
BA1
RFU
V
V
V
A1
A5
A9
DDQ
DDQ
3
SS
SS
SS
4
14
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Ball Assignments and Descriptions
6
512Mb: x4, x8, x16 DDR2 SDRAM
UDQS
DQ10
V
LDQS
V
V
RAS#
CAS#
V
V
DQ2
A11
RFU
A2
A6
DDQ
DDQ
SSDL
SSQ
SSQ
7
UDQS#/NU
LDQS#/NU
V
V
V
V
DQ8
DQ0
CK#
RFU
CS#
CK
A0
A4
A8
SSQ
SSQ
SSQ
SSQ
8
DQ15
DQ13
V
V
V
V
DQ7
DQ5
ODT
V
V
V
©2004 Micron Technology, Inc. All rights reserved.
DDQ
DDQ
DDQ
DDQ
9
DD
DD
SS