MT47H64M8B6-25E L:D TR Micron Technology Inc, MT47H64M8B6-25E L:D TR Datasheet - Page 118

• Manufacturer Part Number: MT47H64M8B6-25E L:D TR
• Description: IC DDR2 SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8B6-25E L:D TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 205mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1427-2

Figure 73: REFRESH Command-to-Power-Down Entry
Figure 74: ACTIVATE Command-to-Power-Down Entry
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. O 7/09 EN
Note:
Note:
Command
Command
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. The earliest active power-down entry may occur is at T2, which is 1 ×
CK#
CKE
CK#
CKE
CK
CK
REFRESH command. Precharge power-down entry occurs prior to
fied.
VATE command. Active power-down entry occurs prior to
Valid
Valid
T0
T0
REFRESH
VALID
ACT
T1
T1
118
1 t CK
1 x t CK
Power-down 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Power-down 1
entry
entry
NOP
NOP
512Mb: x4, x8, x16 DDR2 SDRAM
T2
T2
t CKE (MIN)
t CKE (MIN)
T3
T3
t
RCD (MIN) being satisfied.
Power-Down Mode
©2004 Micron Technology, Inc. All rights reserved.
Don’t Care
Don’t Care
t
RFC (MIN) being satis-
t
CK after the ACTI-
t
CK after the