MT47H256M4HQ-187E:E TR Micron Technology Inc, MT47H256M4HQ-187E:E TR Datasheet - Page 59

IC DDR2 SDRAM 1GBIT 60VFBGA

MT47H256M4HQ-187E:E TR

Manufacturer Part Number
MT47H256M4HQ-187E:E TR
Description
IC DDR2 SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H256M4HQ-187E:E TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
1.875ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
350ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
190mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1426-2
Figure 25: Nominal Slew Rate for
Figure 26: Tangent Line for
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
V
V
V
V
Hold slew rate
rising signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
V
V
REF(DC)
V
V
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
CK#
DDQ
REF(DC)
V
CK
V
t
SS
CK#
IH
DDQ
V
CK
SS
=
DC to V
DC to V
Tangent line (V
region
t
region
IH
REF
REF
REF[DC]
Nominal
slew rate
ΔTR
t IS
t IS
Tangent
line
- V
IL[DC]max
t IH
t IH
59
)
ΔTR
Hold slew rate
falling signal
ΔTR
Nominal
line
Micron Technology, Inc. reserves the right to change products or specifications without notice.
=
Tangent line (V
t IS
Nominal
slew rate
Tangent
DC to V
DC to V
t IS
line
region
region
1Gb: x4, x8, x16 DDR2 SDRAM
t IH
REF
REF
t IH
IH[DC]min
ΔTF
ΔTF
Nominal
Input Slew Rate Derating
line
ΔTF
- V
REF[DC]
)
© 2004 Micron Technology, Inc. All rights reserved.

Related parts for MT47H256M4HQ-187E:E TR