MT47H256M4HQ-187E:E TR Micron Technology Inc, MT47H256M4HQ-187E:E TR Datasheet - Page 21

IC DDR2 SDRAM 1GBIT 60VFBGA

MT47H256M4HQ-187E:E TR

Manufacturer Part Number
MT47H256M4HQ-187E:E TR
Description
IC DDR2 SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr

Specifications of MT47H256M4HQ-187E:E TR

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (256M x 4)
Speed
1.875ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
350ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
190mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1426-2
Figure 10: 60-Ball FBGA (8mm x 10mm) – x4, x8
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Solder ball material:
Pb-free – (SAC305) SnAgCu
Pb – (Eutectic) SnPbAg
Dimensions apply to
solder balls post-reflow
on Ø0.35 SMD ball pads.
60X Ø0.45
Seating
0.12 A
Plane
8 CTR
Note:
0.8 TYP
1. All dimensions are in millimeters.
A
9 8 7
6.4 CTR
8 ±0.15
0.8 TYP
3 2 1
A
B
C
D
E
F
G
H
J
K
L
0.8 ±0.1
1.0 X 0.73 MAX
exposed
gold-plated pad
nonconductive floating pad
21
10 ±0.15
Ball A1 ID
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR2 SDRAM
0.25 MIN
1.2 MAX
© 2004 Micron Technology, Inc. All rights reserved.
Ball A1 ID
Packaging

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