MT47H256M4HQ-187E:E TR Micron Technology Inc, MT47H256M4HQ-187E:E TR Datasheet - Page 2

• Manufacturer Part Number: MT47H256M4HQ-187E:E TR
• Description: IC DDR2 SDRAM 1GBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H256M4HQ-187E:E TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 1.875ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 350ps
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 190mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1426-2

Table 1: Key Timing Parameters
Table 2: Addressing
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Speed Grade
-187E
-25E
-37E
-25
-3E
-3
32 Meg x 4 x 8 banks
CL = 3
A[11, 9:0] (2K)
256 Meg x 4
A[13:0] (16K)
400
400
400
400
400
400
BA[2:0] (8)
8K
CL = 4
533
533
533
667
533
533
Data Rate (MT/s)
2
16 Meg x 8 x 8 banks
CL = 5
667
800
667
667
667
n/a
128 Meg x 8
A[13:0] (16K)
A[9:0] (1K)
BA[2:0] (8)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
8K
1Gb: x4, x8, x16 DDR2 SDRAM
CL = 6
800
800
800
n/a
n/a
n/a
CL = 7
1066
© 2004 Micron Technology, Inc. All rights reserved.
n/a
n/a
n/a
n/a
n/a
8 Meg x 16 x 8 banks
64 Meg x 16
A[12:0] (8K)
A[9:0] (1K)
BA[2:0] (8)
8K
t
Features
RC (ns)
54
55
55
54
55
55