MT47H256M4HQ-187E:E TR Micron Technology Inc, MT47H256M4HQ-187E:E TR Datasheet - Page 126

• Manufacturer Part Number: MT47H256M4HQ-187E:E TR
• Description: IC DDR2 SDRAM 1GBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H256M4HQ-187E:E TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 1.875ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Access Time (max): 350ps
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 190mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1426-2

Figure 80: ODT Timing for Entering and Exiting Power-Down Mode
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
CKE
Applicable modes
Applicable timing parameters
t
AOND/
Any mode except
self refresh mode
Synchronous
t
AOFD
First CKE latched LOW
t
ANPD (3
t
CKs)
Active power-down slow (asynchronous)
Precharge power-down (asynchronous)
Active power-down fast (synchronous)
t
AONPD/
t
AOND/
Synchronous or
t
Asynchronous
t
AOFPD (asynchronous)
AOFD (synchronous)
126
Micron Technology, Inc. reserves the right to change products or specifications without notice.
First CKE latched HIGH
1Gb: x4, x8, x16 DDR2 SDRAM
t
AXPD (8
t
CKs)
© 2004 Micron Technology, Inc. All rights reserved.
Any mode except
self refresh mode
t
AOND/
Synchronous
ODT Timing
t
AOFD