MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 82

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 37: Tangent Line for
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
V
V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
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Notes:
AC
DC
V
) MAX
) MAX
REF
DQS#
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) MIN
V
DQS
CK#
DD
(
V
CK
DC
Nominal
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SS
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line
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V
REF
region
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to AC
IS (Command and Address – Clock)
ΔTF
t IS
t VAC
Tangent
line
t IH
Setup slew rate
Setup slew rate
falling signal
rising signal
82
Nominal
line
Micron Technology, Inc., reserves the right to change products or specifications without notice.
=
=
ΔTR
Tangent line (V
Tangent line (V
t IS
t VAC
1Gb: x4, x8, x16 DDR3 SDRAM
Tangent
line
V
REF
t IH
region
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ΔTR
ΔTF
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to AC
DC
[
DC
] MIN - V
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©2006 Micron Technology, Inc. All rights reserved.
IL
[
AC
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REF
Speed Bin Tables
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