MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 43

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 24:
Figure 18: Overshoot
Figure 19: Undershoot
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter
Maximum peak amplitude allowed for overshoot area
(see Figure 18 on page 43)
Maximum peak amplitude allowed for undershoot area
(see Figure 19 on page 43)
Maximum overshoot area above V
(see Figure 18 on page 43)
Maximum undershoot area below V
(see Figure 19 on page 43)
Clock, Data, Strobe, and Mask Pins
Volts (V)
Volts (V)
V
DD
V
DD
/V
SS
SS
/V
/V
DD
/V
DD
SS
Q
SS
Q
Q
Q
Maximum amplitude
Maximum amplitude
43
DDR3-800
0.25 Vns
0.25 Vns
0.4V
0.4V
Time (ns)
Time (ns)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
DDR3-1066
1Gb: x4, x8, x16 DDR3 SDRAM
0.19 Vns
0.19 Vns
0.4V
0.4V
Undershoot area
Overshoot area
DDR3-1333
©2006 Micron Technology, Inc. All rights reserved.
0.15 Vns
0.15 Vns
0.4V
0.4V
DDR3-1600
0.13 Vns
0.13 Vns
0.4V
0.4V