MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 78

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 55:
Table 56:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Slew Rate
Slew Rate
ADDR
ADDR
CMD/
CMD/
V/ns
V/ns
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
DDR3-800, DDR3-1066, DDR3-1333, and DDR3-1600 Derating Values for
Based
AC175 threshold
DDR3-1333 and DDR3-1600 Derating Values for
AC150 threshold
Δ
Δ
–11
–17
–35
–62
–10
–25
88
59
–2
–6
75
50
–1
4.0 V/ns
t
4.0 V/ns
t
0
0
0
0
0
IS
IS
Δ
Δ
–10
–16
–26
–40
–60
–10
–16
–26
–40
–60
50
34
–4
50
34
–4
AC175 Threshold: V
t
AC150 Threshold: V
t
0
0
IH
IH
Δ
Δ
–11
–17
–35
–62
–10
–25
88
59
–6
75
50
–1
–2
3.0 V/ns
t
3.0 V/ns
t
0
0
0
0
0
IS
IS
Δ
Δ
–10
–16
–26
–40
–60
–10
–16
–26
–40
–60
50
34
50
34
–4
–4
t
t
0
0
IH
IH
Δ
Δ
t
Δ
Δ
t
–11
–17
–35
–62
–10
–25
IS, Δ
88
59
IS, Δ
75
50
–2
–6
–1
2.0 V/ns
2.0 V/ns
t
t
0
0
0
0
0
IH
IH
IS
IS
(
(
AC
AC
t
t
IH Derating (ps) – AC/DC-Based
IH Derating (ps) – AC/DC-Based
Δ
Δ
) = V
) = V
–10
–16
–26
–40
–60
–10
–16
–26
–40
–60
50
34
50
34
–4
–4
t
t
0
0
IH
IH
CK, CK# Differential Slew Rate
CK, CK# Differential Slew Rate
REF
REF
Δ
Δ
–27
–54
–17
96
67
83
58
–3
–9
–2
(
(
1.8 V/ns
1.8 V/ns
t
t
8
6
2
8
8
8
8
7
DC
DC
IS
IS
78
) + 175mV, V
) + 150mV, V
Δ
Δ
–18
–32
–52
–18
–32
–52
58
42
58
42
–2
–8
–2
–8
t
t
8
4
8
4
IH
IH
Δ
Δ
104
–19
–46
Micron Technology, Inc., reserves the right to change products or specifications without notice.
10
16
16
15
75
16
14
–1
91
66
16
16
–9
1.6 V/ns
1.6 V/ns
t
t
5
6
IS
IS
t
IS/
IL
IL
(
(
AC
AC
t
Δ
Δ
–10
–24
–44
–10
–24
–44
IH – AC/DC-Based
12
66
50
16
12
66
50
16
t
t
6
0
6
0
) = V
IH
) = V
IH
1Gb: x4, x8, x16 DDR3 SDRAM
Δ
Δ
REF
REF
112
–11
–38
83
24
22
18
13
99
74
24
24
24
24
23
14
–1
1.4 V/ns
t
1.4 V/ns
t
7
IH
IH
(
(
DC
DC
) - 175mV
) - 150mV
Δ
Δ
–16
–36
–16
–36
74
58
24
20
14
–2
74
58
24
20
14
–2
t
t
8
8
IH
IH
©2006 Micron Technology, Inc. All rights reserved.
Δ
Δ
120
–30
107
91
32
30
26
21
15
82
32
32
32
32
31
22
–2
1.2 V/ns
1.2 V/ns
t
t
7
IS
IS
Speed Bin Tables
t
IS/
Δ
Δ
–26
–26
84
68
34
30
24
18
–6
84
68
34
30
24
18
–6
t
t
t
8
8
IH
IH
IH – AC/DC-
Δ
Δ
128
–22
115
99
40
38
34
29
23
90
40
40
40
40
39
30
15
1.0 V/ns
1.0 V/ns
t
t
5
IS
IS
Δ
Δ
100
100
–10
–10
84
50
46
40
34
24
10
84
50
46
40
34
24
10
t
t
IH
IH