MT46H8M16LFCF-75 Micron Technology Inc, MT46H8M16LFCF-75 Datasheet - Page 65

• Manufacturer Part Number: MT46H8M16LFCF-75
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-75

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 42:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
BA0, BA1
A0–A9
A11
DQS
DQ
CK#
CKE
A10
DM
CK
1
5
Write – DM Operation
t
t
IS
IS
NOP 6
T0
t
Notes:
IH
t
IH
t
t
Bank x
IS
IS
1. DI b = data-out from column n.
2. BL = 4 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T5.
5. PRE = PRECHARGE, ACT = ACTIVE, RA = Row address, BA = Bank address.
6. NOP commands are shown for ease of illustration; other commands may be valid at these
7.
8.
ACT
T1
RA
RA
RA
t
t
times.
t
t
IH
IH
DSH is applicable during
DSH is applicable during
t
CK
t
t
RCD
RAS
NOP 6
T2
t
CH
t
CL
WRITE 2
t
Bank x
IS
3
Col n
T3
t
t
DQSS (NOM)
IH
t
t
t
WPRES
DQSS (MIN) and is referenced from CK T4 or T5.
DQSS (MIN) and is referenced from CK T5 or T6.
65
t
DS
t
WPRE
NOP 6
T4
DI
b
128Mb: 8 Meg x 16 Mobile DDR SDRAM
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP 6
T5
t
DQSH
T5n
t
WPST
NOP 6
T6
©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t WR
NOP 6
T7
TRANSITIONING DATA
DON’T CARE
ALL BANKS
ONE BANK
Bank x 4
T8
PRE
t RP