MT46H8M16LFCF-75 Micron Technology Inc, MT46H8M16LFCF-75 Datasheet - Page 37

• Manufacturer Part Number: MT46H8M16LFCF-75
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-75

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 25:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
ADDRESS
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-PRECHARGE – Uninterrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The PRECHARGE and WRITE commands are to same device. However, the PRECHARGE and
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. PRE = PRECHARGE command.
DQSS
DQSS
DQSS
t
WRITE commands may be to different devices, in which case
PRECHARGE command could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b = data-in for column b.
b
IN
NOP
D
T1
b
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+2
b+1
D
D
IN
IN
b+2
NOP
D
T2
IN
b+3
b+2
D
D
IN
IN
T2n
b+3
D
IN
37
b+3
D
IN
T3
NOP
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
NOP
T4
WR
DON’T CARE
(a or all)
T5
PRE
Bank
6
t
WR is not required and the
TRANSITIONING DATA
©2004 Micron Technology, Inc. All rights reserved.
T6
NOP
Operations