MT46H8M16LFCF-75 Micron Technology Inc, MT46H8M16LFCF-75 Datasheet - Page 41

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-75

Manufacturer Part Number
MT46H8M16LFCF-75
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M16LFCF-75

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Power-Down
Figure 29:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
Power-Down Command (Active or Precharge)
Note:
Power-down is entered when CKE is registered LOW. If power-down occurs when all
banks are idle, this mode is referred to as precharge power-down; if power-down occurs
when there is a row active in any bank, this mode is referred to as active power-down.
Entering power-down deactivates the input and output buffers, including CK and CK#.
Exiting power-down requires the device to be at the same voltage as when it entered
power-down and a stable clock.
While in power-down, CKE LOW must be maintained at the inputs of the Mobile DDR
SDRAM, while all other input signals are “Don’t Care.” The power-down state is exited
when CKE is registered HIGH (in conjunction with a NOP or DESELECT command).
NOPs or DESELECT commands must be maintained on the command bus until
satisfied.
RAS#, CAS#, WE#
RAS#, CAS#, WE#
The power-down duration is limited by the refresh requirements of the device.
BA0–BA1
A0–A11
CKE
CK#
CS#
CS#
CK
BA0,1
DON’T CARE
OR
41
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Operations
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