MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 68

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 55:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
IN/OUT
ADV#
WAIT
WE#
OE#
CE#
Asynchronous WRITE Followed by Asynchronous READ
Notes:
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
IH
IL
t VPH
High-Z
1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
Valid address
t AVS
t AS t WP
t VP
t CVS
5ns (
after CE#-controlled WRITEs.
t CW
t
Data
t AVH
CPH) to schedule the appropriate refresh interval. Otherwise,
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
t DH
t WPH
t WC
t AS
Valid address
t AW
t BW
t VS
t DW
Data
t WR
68
Note 1
t CPH
V
V
OH
OL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
High-Z
t BLZ
t LZ
t AA
Valid address
t OLZ
Don’t Care
t OE
©2005 Micron Technology, Inc. All rights reserved.
Valid output
t
Timing Diagrams
CPH is only required
Undefined
t OHZ
t BHZ
t HZ