MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 37

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15:
Figure 26:
Figure 27:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
Description
Input capacitance
Input/output capacitance (DQ)
Capacitance
AC Input/Output Reference Waveform
AC Output Load Circuit
Notes:
Notes:
Note:
1. These parameters are verified in device characterization and are not 100 percent tested.
Input
1. AC test inputs are driven at V
2. Input timing begins at V
3. Output timing ends at V
DUT
V
times (10 percent to 90 percent) < 1.6ns.
V
CC
All tests are performed with the outputs configured for a default setting of half drive
strength (BCR[5:4] = 01b).
SS
1
Q
Q
T
C
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
= +25°C; f = 1 MHz;
Conditions
V
CC
V
Test point
Q/2
IN
= 0V
2
30pF
50
CC
CC
Q/2.
Q/2.
37
CC
Symbol
V
Q for a logic 1 and V
cc
C
C
Test points
Q/2
IO
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
2.0
3.5
SS
Q for a logic 0. Input rise and fall
Electrical Characteristics
V
Max
CC
6
6
Q/2
©2005 Micron Technology, Inc. All rights reserved.
3
Output
Unit
pF
pF
Notes
1
1