MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 30
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MT45W4MW16BCGB-701 WT
Manufacturer Part Number
MT45W4MW16BCGB-701 WT
Description
IC PSRAM 64MBIT 70NS 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W4MW16BCGB-701_IT.pdf
(69 pages)
Specifications of MT45W4MW16BCGB-701 WT
Format - Memory
RAM
Memory Type
PSRAM (Page)
Memory Size
64M (4M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-30°C ~ 85°C
Package / Case
54-VFBGA
Operating Temperature (max)
85C
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 7:
Figure 23:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
BCR[13:11]
010
011
100
101
110
000
Others
DQ[15:0]
DQ[15:0]
(WRITE)
A[21:0]
(READ)
ADV#
CLK
CE#
Fixed Latency Configuration Codes (BCR[14] = 1)
V
V
V
V
V
V
V
V
V
V
V
V
Latency Counter (Fixed Latency)
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
2 (3 clocks)
3 (4 clocks)—default
4 (5 clocks)
5 (6 clocks)
6 (7 clocks)
8 (9 clocks)
Reserved
Configuration Code
address
Latency
Valid
Burst identified
(ADV# = LOW)
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
t AADV
t AA
t CO
Cycles
N-1
Latency Count (N)
Cycle N
2
3
4
5
6
8
–
30
t ACLK
output
Valid
t SP t HD
input
Valid
Micron Technology, Inc., reserves the right to change products or specifications without notice.
104 (9.62ns)
52 (19.2ns)
75 (13.3ns)
133 (7.5ns)
33 (30ns)
66 (15ns)
output
Valid
Maximum Input CLK Frequency (MHz)
-7013
Valid
input
–
output
Valid
input
Valid
Don’t Care
104 (9.62ns)
104 (9.62ns)
52 (19.2ns)
75 (13.3ns)
33 (30ns)
66 (15ns)
-70
©2005 Micron Technology, Inc. All rights reserved.
–
output
Valid
Valid
input
Undefined
52 (19.2ns)
75 (13.3ns)
80 (12.5ns)
80 (12.5ns)
output
33 (30ns)
66 (15ns)
Valid
Registers
input
-708
Valid
–