MT45W4MW16BCGB-701 WT Micron Technology Inc, MT45W4MW16BCGB-701 WT Datasheet - Page 51

• Manufacturer Part Number: MT45W4MW16BCGB-701 WT
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BCGB-701 WT

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Operating Temperature (max): 85C
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 38:
PDF: 09005aef8247bd51/Source: 09005aef8247bd83
64mb_burst_cr1_5_p25z_133mhz__2.fm - Rev. F 9/07 EN
DQ[15:0]
LB#/UB#
A[21:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OH
OL
OL
IH
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
Burst READ at End-of-Row (Wrap Off)
Notes:
t CLK
1. Nondefault BCR settings for burst READ at end of row: fixed or variable latency; WAIT
2. For burst READs, CE# must go HIGH before the third CLK after the WAIT period begins
output
Valid
active LOW; WAIT asserted during delay.
(before the third CLK after WAIT asserts with BCR[8] = 0 or before the fourth CLK after
WAIT asserts with BCR[8] = 1). Micron devices are fully compatible with the CellularRAM
Workgroup specification that requires CE# to go HIGH 1 cycle sooner than shown here.
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory
t KHTL
output
Valid
End of row
t HZ
Note 2
51
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t HZ
High-Z
©2005 Micron Technology, Inc. All rights reserved.
Timing Diagrams
Don’t Care