M27C801-100B1 STMicroelectronics, M27C801-100B1 Datasheet - Page 7

• Manufacturer Part Number: M27C801-100B1
• Description: IC OTP 8MBIT 100NS 32DIP
• Manufacturer: STMicroelectronics

Specifications of M27C801-100B1

• Format - Memory: EPROMs
• Memory Type: OTP EPROM
• Memory Size: 8M (1M x 8)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (0.600", 15.24mm)
• Organization: 1Mx8
• Interface Type: Parallel
• In System Programmable: External
• Access Time (max): 100ns
• Package Type: PDIP
• Reprogramming Technique: OTP
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Supply Current: 50mA
• Pin Count: 32
• Mounting: Through Hole
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Capacitance, Input: 6 pF
• Capacitance, Output: 12 pF
• Current, Input, Leakage: ±10 μA
• Current, Operating: 35 mA
• Current, Output, Leakage: ±10
• Current, Supply: 35 mA (Max.)
• Density: 8M
• Temperature, Operating: 0 to +70 °C
• Temperature, Operating, Maximum: 70 °C
• Temperature, Operating, Minimum: 0 °C
• Time, Access: 100 ns
• Time, Fall: ≤20 ns
• Time, Rise: ≤20 ns
• Voltage, Input, High: 6 V
• Voltage, Input, High Level: 2 V (Min.)
• Voltage, Input, Low: 0.8 V
• Voltage, Input, Low Level: 0.80 V (Max.)
• Voltage, Output, High: 3.6 V (TTL), 4.3 V (CMOS)
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 5 V
• Access Time: 45ns
• Low Power Consumption: - Active current 35mA at 5 MHz - Standby current 100 μA
• Programming Voltage: 12.75 V ± 0.25 V
• Memory Configuration: 1M X 8
• Supply Voltage Range: 4.5V To 5V
• Memory Case Style: DIP
• No. Of Pins: 32
• Rohs Compliant: Yes
• Operating Temperature Range: 0°C To +70°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-1687-5

Table 9. Programming Mode DC Characteristics
(T
Note: 1. V
Table 10. MARGIN MODE AC Characteristics
(T
Note: 1. V
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C801 are in the ’1’
state. Data is introduced by selectively program-
ming ’0’s into the desired bit locations. Although
only ’0’ will be programmed, both ’1’s and ’0’s can
be present in the data word. The only way to
change a ’0’ to a ’1’ is by die exposure to ultraviolet
Symbol
A
A
Symbol
t
t
t
t
t
t
A9HVPH
t
A10HEH
EXA10X
VPXA9X
A10LEH
VPHEL
EXVPX
V
= 25 °C; V
V
= 25 °C; V
V
V
I
I
V
I
CC
PP
OH
OL
LI
IH
ID
IL
CC
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
t
t
t
CC
CC
t
t
t
AS10
AS10
AH10
t
VPH
Alt
VPS
AH9
AS9
= 6.25V ± 0.25V; V
= 6.25V ± 0.25V; V
V
V
V
V
Chip Enable Transition to V
Chip Enable Transition to V
V
Parameter
A9
A10
A10
PP
PP
High to V
High to Chip Enable Low
Transition to V
High to Chip Enable High (Set)
Low to Chip Enable High (Reset)
PP
Parameter
High
PP
PP
A9
= 12.75V ± 0.25V)
= 12.75V ± 0.25V)
Transition
A10
PP
PP
PP
Transition
(1)
Transition
and removed simultaneously or after V
and removed simultaneously or after V
Test Condition
V
I
I
IL
(1)
OL
OH
E = V
= 2.1mA
light (UV EPROM). The M27C801 is in the pro-
gramming mode when V
E is pulsed to V
applied to 8 bits in parallel to the data output pins.
The levels required for the address and data in-
puts are TTL. V
0.25V.
= –1mA
V
IN
IL
V
IH
Test Condition
IL
CC
. The data to be programmed is
11.5
–0.3
Min
3.6
2
is specified to be 6.25V ±
PP
PP
PP
.
.
Min
2
2
1
1
1
2
2
input is at 12.75V and
V
CC
Max
12.5
±10
0.8
0.4
50
50
+ 0.5
Max
M27C801
Unit
mA
mA
V
V
V
V
V
A
Unit
µs
µs
µs
µs
µs
µs
µs
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