M27C801-100B1 STMicroelectronics, M27C801-100B1 Datasheet - Page 5

IC OTP 8MBIT 100NS 32DIP

M27C801-100B1

Manufacturer Part Number
M27C801-100B1
Description
IC OTP 8MBIT 100NS 32DIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C801-100B1

Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
8M (1M x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (0.600", 15.24mm)
Organization
1Mx8
Interface Type
Parallel
In System Programmable
External
Access Time (max)
100ns
Package Type
PDIP
Reprogramming Technique
OTP
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Supply Current
50mA
Pin Count
32
Mounting
Through Hole
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA
Current, Operating
35 mA
Current, Output, Leakage
±10
Current, Supply
35 mA (Max.)
Density
8M
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
100 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V
Voltage, Input, Low Level
0.80 V (Max.)
Voltage, Output, High
3.6 V (TTL), 4.3 V (CMOS)
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V
Access Time
45ns
Low Power Consumption
- Active current 35mA at 5 MHz - Standby current 100 μA
Programming Voltage
12.75 V ± 0.25 V
Memory Configuration
1M X 8
Supply Voltage Range
4.5V To 5V
Memory Case Style
DIP
No. Of Pins
32
Rohs Compliant
Yes
Operating Temperature Range
0°C To +70°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1687-5

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Table 7. Read Mode DC Characteristics
(T
Note: 1. V
Table 8A. Read Mode AC Characteristics
(T
Note: 1. V
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, the product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
t
t
Symbol
GHQZ
EHQZ
Symbol
A
A
t
t
t
t
will not occur.
V
AVQV
ELQV
GLQV
AXQX
I
I
V
= 0 to 70 °C or –40 to 85 °C; V
V
= 0 to 70 °C or –40 to 85 °C; V
I
I
I
V
IH
CC1
CC2
I
CC
LO
PP
2. Maximum DC voltage on Output is V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
OH
OL
LI
IL
(2)
(2)
(2)
CC
CC
must be applied simultaneously with or before V
must be applied simultaneously with or before V
t
t
t
Alt
ACC
t
t
t
CE
OE
OH
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
DF
DF
Address Valid to Output Valid
Chip Enable Low to Output Valid
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Address Transition to Output
Transition
Parameter
Parameter
CC
CC
CC
+0.5V.
= 5V ± 10%)
= 5V ± 10%)
(1)
(1)
PP
PP
I
and removed simultaneously or after V
and removed simultaneously or after V
OUT
GV
GV
GV
GV
E = V
Condition
0V
E = V
E = V
E = V
E = V
Test Condition
0V
E > V
I
PP
PP
PP
PP
Test
OH
I
= 0mA, f = 5MHz
I
OL
V
OH
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
IL
= V
= V
= V
= V
PP
E = V
V
, GV
= –100 A
IL
IL
IL
IL
= 2.1mA
V
CC
OUT
= –1mA
,
,
IN
= V
IL
IL
IL
IL
– 0.2V
PP
IH
CC
V
Min
V
= V
CC
0
0
0
CC
-45
IL
,
(3)
Max
45
45
25
25
25
Min
V
M27C801
0
0
0
CC
–0.3
Min
3.6
PP
PP.
-60
2
– 0.7
.
Max
60
60
30
25
25
Min
V
0
0
0
CC
Max
±10
±10
100
0.8
0.4
35
10
1
-70
+ 1
M27C801
Max
70
70
35
30
30
Unit
mA
mA
Unit
V
V
V
V
V
A
A
A
A
ns
ns
ns
ns
ns
ns
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