M29DW323DB70N6F NUMONYX, M29DW323DB70N6F Datasheet - Page 26

• Manufacturer Part Number: M29DW323DB70N6F
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29DW323DB70N6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NOR
• Density: 32 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 63
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M29DW323DT, M29DW323DB
Figure 11. Read Mode AC Waveforms
Table 15. Read AC Characteristics
Note: 1. Sampled only, not 100% tested.
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t
t
t
Symbol
t
GHQZ
GLQX
EHQZ
ELQX
t
t
t
t
t
t
t
t
t
t
t
A0-A20/
A–1
E
G
DQ0-DQ7/
DQ8-DQ15
GHQX
GLQV
EHQX
AXQX
BHQV
AVQV
ELQV
ELBH
BLQZ
AVAV
ELBL
BYTE
(1)
(1)
(1)
(1)
t
t
t
t
t
FHQV
t
ELFH
FLQZ
ELFL
t
ACC
t
t
t
Alt
OLZ
t
t
t
OH
RC
CE
OE
HZ
DF
LZ
tELBL/tELBH
Address Valid to Next Address Valid
Address Valid to Output Valid
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable Low to Output Transition
Output Enable Low to Output Valid
Chip Enable High to Output Hi-Z
Output Enable High to Output Hi-Z
Chip Enable, Output Enable or Address
Transition to Output Transition
Chip Enable to BYTE Low or High
BYTE Low to Output Hi-Z
BYTE High to Output Valid
tBHQV
tAVQV
Parameter
tELQX
tELQV
tGLQX
tGLQV
tAVAV
VALID
tBLQZ
Test Condition
E = V
E = V
G = V
G = V
G = V
G = V
G = V
E = V
E = V
E = V
VALID
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
,
,
tGHQX
tGHQZ
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
tEHQZ
M29DW323D
70
70
70
30
25
25
25
30
0
0
0
5
tEHQX
tAXQX
AI05559
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns