M29DW323DB70N6F NUMONYX, M29DW323DB70N6F Datasheet - Page 25

• Manufacturer Part Number: M29DW323DB70N6F
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29DW323DB70N6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Package: 48TSOP
• Cell Type: NOR
• Density: 32 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 63
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14. DC Characteristics
Note: 1. Sampled only, not 100% tested.
I
Symbol
CC3
I
CC1
V
I
V
V
V
V
V
I
V
I
CC2
I
LKO
LO
PP
OH
LI
PP
OL
2. In Dual operations the Supply Current will be the sum of
IH
ID
IL
(1,2)
(2)
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Supply Current (Standby)
Supply Current (Program/
Erase)
Input Low Voltage
Input High Voltage
Voltage for
Acceleration
Current for
Acceleration
Output Low Voltage
Output High Voltage
Identification Voltage
Program/Erase Lockout Supply
Voltage
Parameter
V
V
PP
PP
/WP
/WP
Program
Program
Controller active
Program/Erase
V
V
0V ≤ V
E = V
RP = V
Test Condition
0V ≤ V
E = V
CC
CC
I
OH
I
I
CC1
OL
f = 6MHz
= 2.7V ±10%
= 2.7V ±10%
= –100
IL
= 1.8mA
(read) and
CC
OUT
, G = V
CC
IN
±0.2V,
≤ V
V
±0.2V
≤ V
PP
µ
V
V
CC
A
PP
IH
/WP = V
CC
IL
I
,
CC3
/WP =
or V
(program/erase).
IH
PP
M29DW323DT, M29DW323DB
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
V
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
mA
mA
mA
mA
µ
µ
µ
25/51
V
V
V
V
V
V
V
A
A
A