M29DW323DB70N6F NUMONYX, M29DW323DB70N6F Datasheet - Page 21

IC FLASH 32MBIT 70NS 48TSOP

M29DW323DB70N6F

Manufacturer Part Number
M29DW323DB70N6F
Description
IC FLASH 32MBIT 70NS 48TSOP
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29DW323DB70N6F

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
32M (4Mx8, 2Mx16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Package
48TSOP
Cell Type
NOR
Density
32 Mb
Architecture
Sectored
Block Organization
Asymmetrical
Location Of Boot Block
Bottom
Typical Operating Supply Voltage
3|3.3 V
Sector Size
8KByte x 8|64KByte x 63
Timing Type
Asynchronous
Interface Type
Parallel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 8. Status Register Bits
Note: Unspecified data bits should be ignored.
Figure 7. Data Polling Flowchart
Program
Program During Erase
Suspend
Program Error
Chip Erase
Block Erase before
timeout
Block Erase
Erase Suspend
Erase Error
Operation
at VALID ADDRESS
at VALID ADDRESS
NO
READ DQ5 & DQ7
READ DQ7
START
DATA
DATA
DQ7
DQ5
DQ7
FAIL
= 1
=
=
YES
Faulty Block Address
NO
NO
Good Block Address
Non-Erasing Block
Non-Erasing Block
Non-Erasing Block
Bank Address
Bank Address
Bank Address
Erasing Block
Erasing Block
Erasing Block
Any Address
YES
YES
Address
PASS
AI90194
DQ7
DQ7
DQ7
DQ7
0
0
0
0
0
1
0
0
Figure 8. Toggle Flowchart
Note: BA = Address of Bank being Programmed or Erased.
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ6
Data read as normal
DQ5
M29DW323DT, M29DW323DB
NO
0
0
1
0
0
0
0
0
0
1
1
ADDRESS = BA
ADDRESS = BA
ADDRESS = BA
DQ5 & DQ6
READ DQ6
READ DQ6
TOGGLE
TOGGLE
START
TWICE
READ
DQ6
DQ5
DQ6
FAIL
= 1
=
=
DQ3
YES
YES
YES
1
0
0
1
1
1
1
No Toggle
No Toggle
No Toggle
Toggle
Toggle
Toggle
Toggle
Toggle
DQ2
NO
NO
PASS
AI08929b
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
RB
0
0
0
0
0
0
0
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