PESD5V0L5UV T/R NXP Semiconductors, PESD5V0L5UV T/R Datasheet - Page 6

• Manufacturer Part Number: PESD5V0L5UV T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L5UV T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3(Max) mm W x 1.7(Max) mm L
• Package / Case: SOT-666
• Peak Pulse Power Dissipation: 25 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0L5UV,115

NXP Semiconductors
PESDXL5UF_V_Y_2
Product data sheet
Table 9.
T
[1]
[2]
Symbol Parameter
C
V
r
dif
amb
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
= 25 C unless otherwise specified.
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
Low capacitance unidirectional fivefold ESD protection diode arrays
Rev. 02 — 8 January 2008
…continued
Conditions
f = 1 MHz;
V
I
I
I
I
I
PP
PP
PP
PP
R
R
= 1 mA
= 0 V
= 1 A
= 2.5 A
= 1 A
= 2.5 A
[1][2]
PESDxL5UF/V/Y
Min
-
-
-
-
-
-
-
-
Typ
22
16
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
28
19
10
12
10
12
200
100
Unit
pF
pF
V
V
V
V
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