PESD5V0L5UV T/R NXP Semiconductors, PESD5V0L5UV T/R Datasheet - Page 4

• Manufacturer Part Number: PESD5V0L5UV T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L5UV T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3(Max) mm W x 1.7(Max) mm L
• Package / Case: SOT-666
• Peak Pulse Power Dissipation: 25 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0L5UV,115

NXP Semiconductors
5. Limiting values
PESDXL5UF_V_Y_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
T
[1]
[2]
Table 8.
Symbol
Per diode
P
I
Per device
T
T
T
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PP
amb
j
amb
stg
PP
ESD
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
= 25 C unless otherwise specified.
Parameter
electrostatic discharge voltage
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Low capacitance unidirectional fivefold ESD protection diode arrays
Rev. 02 — 8 January 2008
Conditions
t
t
p
p
= 8/20 s
= 8/20 s
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDxL5UF/V/Y
[1][2]
[1][2]
Min
-
-
-
65
65
[1][2]
Min
-
-
© NXP B.V. 2008. All rights reserved.
Max
25
2.5
150
+150
+150
Max
20
10
Unit
W
A
C
C
C
Unit
kV
kV
4 of 17