PESD5V0L5UV T/R NXP Semiconductors, PESD5V0L5UV T/R Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L5UV T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L5UV T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3(Max) mm W x 1.7(Max) mm L
• Package / Case: SOT-666
• Peak Pulse Power Dissipation: 25 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0L5UV,115

NXP Semiconductors
6. Characteristics
PESDXL5UF_V_Y_2
Product data sheet
Fig 1. 8/20 s pulse waveform according to
(%)
I
PP
120
80
40
0
IEC 61000-4-5
0
10
100 % I
Table 9.
T
Symbol Parameter
Per diode
V
I
V
RM
amb
e
RWM
BR
PP
t
; 8 s
20
= 25 C unless otherwise specified.
50 % I
reverse standoff voltage
reverse leakage current
breakdown voltage
Characteristics
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PP
30
; 20 s
Low capacitance unidirectional fivefold ESD protection diode arrays
001aaa630
t ( s)
Rev. 02 — 8 January 2008
40
Conditions
V
V
I
R
RWM
RWM
Fig 2. ESD pulse waveform according to
= 1 mA
= 3.3 V
= 5.0 V
100 %
10 %
90 %
IEC 61000-4-2
I
PP
t
r
30 ns
0.7 ns to 1 ns
PESDxL5UF/V/Y
Min
-
-
-
-
5.3
6.4
60 ns
Typ
-
-
75
5
5.6
6.8
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
300
25
5.9
7.2
001aaa631
t
Unit
V
V
nA
nA
V
V
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