PESD5V0L5UV T/R NXP Semiconductors, PESD5V0L5UV T/R Datasheet - Page 2

• Manufacturer Part Number: PESD5V0L5UV T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L5UV T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3(Max) mm W x 1.7(Max) mm L
• Package / Case: SOT-666
• Peak Pulse Power Dissipation: 25 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0L5UV,115

NXP Semiconductors
2. Pinning information
PESDXL5UF_V_Y_2
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
PESD3V3L5UF; PESD5V0L5UF
1
2
3
4
5
6
PESD3V3L5UV; PESD5V0L5UV
1
2
3
4
5
6
amb
RWM
d
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 5)
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 5)
Quick reference data
Pinning
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
Low capacitance unidirectional fivefold ESD protection diode arrays
Rev. 02 — 8 January 2008
Conditions
f = 1 MHz; V
Simplified outline
bottom view
R
1
6
= 0 V
1
6
2
5
2
5
PESDxL5UF/V/Y
4
3
Min
-
-
-
-
3
4
Typ
-
-
22
16
Symbol
1
2
3
1
2
3
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
28
19
006aaa159
006aaa159
Unit
V
V
pF
pF
2 of 17
6
5
4
6
5
4