PESD3V3L4UW T/R NXP Semiconductors, PESD3V3L4UW T/R Datasheet - Page 3

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PESD3V3L4UW T/R

Manufacturer Part Number
PESD3V3L4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD3V3L4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
5.32 V
Clamping Voltage
12 V
Operating Voltage
3.3 V
Peak Surge Current
3 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
4000
Part # Aliases
PESD3V3L4UW,115
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
PESDXL4UF_G_W_4
Product data sheet
Table 4.
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
Type number
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
Symbol
Per diode
P
I
I
PP
FSM
PP
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Limiting values
Parameter
peak pulse power
peak pulse current
non-repetitive peak forward
current
Low capacitance unidirectional quadruple ESD protection diode arrays
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
Package
Name
XSON6
SC-88A
-
Rev. 04 — 28 February 2008
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
plastic surface-mounted package; 5 leads
plastic surface-mounted package; 5 leads
Conditions
t
t
square wave;
t
p
p
p
= 8/20 s
= 8/20 s
= 1 ms
Marking code
A5
A6
L1*
L2*
A2
A1
PESDxL4UF/G/W
[1][2][3]
[1][2][3]
[1]
1.45
Min
-
-
-
-
0.5 mm
© NXP B.V. 2008. All rights reserved.
Max
30
3.0
2.5
3.5
Version
SOT886
SOT353
SOT665
Unit
W
A
A
A
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