PESD3V3L4UW T/R NXP Semiconductors, PESD3V3L4UW T/R Datasheet - Page 2

• Manufacturer Part Number: PESD3V3L4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3L4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 3 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD3V3L4UW,115

NXP Semiconductors
2. Pinning information
PESDXL4UF_G_W_4
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
PESD3V3L4UF; PESD5V0L4UF
1
2
3
4
5
6
PESD3V3L4UG; PESD5V0L4UG
1
2
3
4
5
PESD3V3L4UW; PESD5V0L4UW
1
2
3
4
5
amb
RWM
d
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
Quick reference data
Pinning
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
Low capacitance unidirectional quadruple ESD protection diode arrays
Rev. 04 — 28 February 2008
Conditions
f = 1 MHz; V
Simplified outline
bottom view
R
1
6
= 0 V
1
5
1
5
PESDxL4UF/G/W
2
2
5
2
4
3
Min
-
-
-
-
4
3
3
4
Typ
-
-
22
16
Symbol
1
2
3
1
2
3
1
2
3
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
28
19
006aaa156
006aaa157
006aaa157
Unit
V
V
pF
pF
6
5
4
5
4
5
4
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