PESD3V3L4UW T/R NXP Semiconductors, PESD3V3L4UW T/R Datasheet - Page 14

• Manufacturer Part Number: PESD3V3L4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3L4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 3 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD3V3L4UW,115

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 16. Reflow soldering footprint PESDxL4UW (SOT665)
Reflow soldering is the only recommended soldering method.
2.00 1.70 1.00
Low capacitance unidirectional quadruple ESD protection diode arrays
0.075
Rev. 04 — 28 February 2008
0.70
(2 )
solder lands
solder resist
0.45
(2 )
placement area
occupied area
2.45
2.10
1.20
2.20
1.60
PESDxL4UF/G/W
1.375
1.25
Dimensions in mm
0.30
0.375
0.15
(2x)
(2 )
© NXP B.V. 2008. All rights reserved.
0.40
(5 )
0.55
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