PESD3V3L4UW T/R NXP Semiconductors, PESD3V3L4UW T/R Datasheet - Page 13

• Manufacturer Part Number: PESD3V3L4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3L4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 3 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD3V3L4UW,115

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A)
Fig 15. Wave soldering footprint PESDxL4UG (SOT353/SC-88A)
Dimensions in mm
4.50
solder lands
solder resist
occupied area
Dimensions in mm
Low capacitance unidirectional quadruple ESD protection diode arrays
2.70
solder lands
solder paste
solder resist
occupied area
0.70
2.35
Rev. 04 — 28 February 2008
0.50
(4 )
transport direction during soldering
2.25
0.50
(4 )
1.15
3.75
2.65
1.20
2.40
PESDxL4UF/G/W
2.65
0.60
(1 )
0.40 0.90
© NXP B.V. 2008. All rights reserved.
0.30
sot353_fr
2.10
1.00
4.00
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