PESD5V0S4UF T/R NXP Semiconductors, PESD5V0S4UF T/R Datasheet - Page 7

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PESD5V0S4UF T/R

Manufacturer Part Number
PESD5V0S4UF T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0S4UF T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.46 V
Clamping Voltage
12 V
Operating Voltage
5 V
Peak Surge Current
10 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.05(Max) mm W x 1.5(Max) mm L
Package / Case
SOT-886
Peak Pulse Power Dissipation
110 W
Factory Pack Quantity
5000
Part # Aliases
PESD5V0S4UF,115
NXP Semiconductors
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Fig 8. ESD clamping test setup and waveforms
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
IEC 61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C
Z
R
Z
Z
= 330
vertical scale = 100 V/div
horizontal scale = 50 ns/div
vertical scale = 100 V/div
horizontal scale = 50 ns/div
Device
Under
DUT
Test
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
450
Unidirectional quadruple ESD protection diode arrays
RG 223/U
50
GND
coax
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
ATTENUATOR
PESD5V0S4UF
PESD3V3S4UF
10
(1): attenuator is only used for open
(1)
socket high voltage measurements
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
DIGITIZING
© NXP B.V. 2008. All rights reserved.
50
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