PESD5V0S4UF T/R NXP Semiconductors, PESD5V0S4UF T/R Datasheet - Page 6

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PESD5V0S4UF T/R

Manufacturer Part Number
PESD5V0S4UF T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0S4UF T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.46 V
Clamping Voltage
12 V
Operating Voltage
5 V
Peak Surge Current
10 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.05(Max) mm W x 1.5(Max) mm L
Package / Case
SOT-886
Peak Pulse Power Dissipation
110 W
Factory Pack Quantity
5000
Part # Aliases
PESD5V0S4UF,115
NXP Semiconductors
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Fig 7. V-I characteristics for a unidirectional ESD protection diode
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
V
CL
V
BR
Unidirectional quadruple ESD protection diode arrays
V
RWM
P-N
+
I
I
I
I
RM
R
PP
006aaa407
V
© NXP B.V. 2008. All rights reserved.
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