PESD5V0S4UF T/R NXP Semiconductors, PESD5V0S4UF T/R Datasheet - Page 4

• Manufacturer Part Number: PESD5V0S4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.46 V
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Peak Surge Current: 10 A
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 110 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD5V0S4UF,115

NXP Semiconductors
6. Characteristics
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Table 8.
T
[1]
[2]
Symbol Parameter
Per diode
V
I
V
C
V
r
R
dif
amb
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
= 25 C unless otherwise specified.
reverse standoff voltage
reverse current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3S4UF
PESD5V0S4UF
PESD3V3S4UF
PESD5V0S4UF
PESD3V3S4UF
PESD5V0S4UF
PESD3V3S4UF
PESD5V0S4UF
PESD3V3S4UF
PESD5V0S4UF
PESD3V3S4UF
PESD5V0S4UF
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Conditions
V
V
I
f = 1 MHz; V
I
I
I
I
I
R
PP
PP
PP
PP
R
R
R
= 1 mA
= 1 mA
= 3.0 V
= 4.3 V
= 1 A
= 10 A
= 1 A
= 10 A
R
= 0 V
[1][2]
Min
-
-
-
-
5.32
6.46
-
-
-
-
-
-
-
-
Typ
-
-
100
4
5.6
6.8
110
85
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
1000
100
5.88
7.14
300
220
8
11
8
12
400
200
Unit
V
V
nA
nA
V
V
pF
pF
V
V
V
V
4 of 13