PESD5V0S4UF T/R NXP Semiconductors, PESD5V0S4UF T/R Datasheet - Page 2

• Manufacturer Part Number: PESD5V0S4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.46 V
• Clamping Voltage: 12 V
• Operating Voltage: 5 V
• Peak Surge Current: 10 A
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 110 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD5V0S4UF,115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PESD3V3S4UF
PESD5V0S4UF
Type number
PESD3V3S4UF
PESD5V0S4UF
Symbol
Per diode
P
I
PP
PP
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
Pinning
Ordering information
Marking codes
Limiting values
Parameter
peak pulse power
peak pulse current
Package
Name
XSON6
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
Unidirectional quadruple ESD protection diode arrays
Conditions
t
t
p
p
= 8/20 s
= 8/20 s
Simplified outline
Marking code
A3
A4
bottom view
1
6
2
5
[1]
[1][2]
[1][2]
1.45
3
4
Min
-
-
0.5 mm
Symbol
1
2
3
© NXP B.V. 2008. All rights reserved.
Max
110
10
006aaa156
Version
SOT886
Unit
W
A
6
5
4
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