PESD3V3V4UG T/R NXP Semiconductors, PESD3V3V4UG T/R Datasheet - Page 9

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PESD3V3V4UG T/R

Manufacturer Part Number
PESD3V3V4UG T/R
Description
TVS Diode Arrays 3.3V QUAD ESD PROTCT
Manufacturer
NXP Semiconductors
Series
PESDxV4Ur
Datasheet

Specifications of PESD3V3V4UG T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
4 Channels
Breakdown Voltage
5.6 V
Clamping Voltage
11 V
Operating Voltage
3.3 V
Peak Surge Current
2 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Capacitance
18 pF
Dimensions
1.35(Max) mm W x 2.2(Max) mm L
Package / Case
SOT-353
Peak Pulse Power Dissipation
16 W
Factory Pack Quantity
3000
Part # Aliases
PESD3V3V4UG,115
NXP Semiconductors
7. Application information
PESDXV4UF_G_W_3
Product data sheet
The devices are designed for the protection of up to four unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 16 W per line for an 8/20 s waveform each.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
Fig 9. Application diagram
ground loops.
vias.
unidirectional protection of 4 lines
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
1
2
3
DUT
5
4
bidirectional protection of 3 lines
n.c.
PESDxV4UF/G/W
1
2
3
data- or transmission lines
DUT
006aab126
5
4
© NXP B.V. 2008. All rights reserved.
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