PESD3V3V4UG T/R NXP Semiconductors, PESD3V3V4UG T/R Datasheet - Page 4

• Manufacturer Part Number: PESD3V3V4UG T/R
• Description: TVS Diode Arrays 3.3V QUAD ESD PROTCT
• Manufacturer: NXP Semiconductors
• Series: PESDxV4Ur

Specifications of PESD3V3V4UG T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Breakdown Voltage: 5.6 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 18 pF
• Dimensions: 1.35(Max) mm W x 2.2(Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD3V3V4UG,115

NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 1. 8/20 s pulse waveform according to
(%)
I
PP
120
80
40
0
IEC 61000-4-5
0
10
100 % I
Table 7.
T
[1]
[2]
[3]
Table 8.
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
e
ESD
PP
t
Device stressed with ten non-repetitive ESD pulses.
For PESDxV4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxV4UG and PESDxV4UW measured from pin 1, 3, 4 or 5 to pin 2.
; 8 s
20
= 25 C unless otherwise specified.
50 % I
Parameter
electrostatic discharge voltage
ESD maximum ratings
ESD standards compliance
PP
30
; 20 s
001aaa630
t ( s)
Rev. 03 — 28 January 2008
40
Very low capacitance quadruple ESD protection diode arrays
Fig 2. ESD pulse waveform according to
100 %
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
10 %
90 %
IEC 61000-4-2
I
PP
Conditions
> 8 kV (contact)
> 4 kV
t
r
30 ns
PESDxV4UF/G/W
0.7 ns to 1 ns
60 ns
[1][2][3]
Min
-
-
© NXP B.V. 2008. All rights reserved.
001aaa631
Max
12
10
t
Unit
kV
kV
4 of 16