PESD3V3V4UG T/R NXP Semiconductors, PESD3V3V4UG T/R Datasheet - Page 2

• Manufacturer Part Number: PESD3V3V4UG T/R
• Description: TVS Diode Arrays 3.3V QUAD ESD PROTCT
• Manufacturer: NXP Semiconductors
• Series: PESDxV4Ur

Specifications of PESD3V3V4UG T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Breakdown Voltage: 5.6 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 18 pF
• Dimensions: 1.35(Max) mm W x 2.2(Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD3V3V4UG,115

NXP Semiconductors
2. Pinning information
PESDXV4UF_G_W_3
Product data sheet
1.4 Quick reference data
Table 2.
T
Table 3.
Symbol
Per diode
V
C
Pin
PESD3V3V4UF; PESD5V0V4UF
1
2
3
4
5
6
PESD3V3V4UG; PESD5V0V4UG
1
2
3
4
5
PESD3V3V4UW; PESD5V0V4UW
1
2
3
4
5
amb
RWM
d
= 25 C unless otherwise specified.
Parameter
reverse standoff voltage
diode capacitance
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
Quick reference data
Pinning
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
Conditions
f = 1 MHz; V
Simplified outline
bottom view
R
1
6
= 0 V
1
5
1
5
PESDxV4UF/G/W
2
2
5
2
4
3
Min
-
-
-
-
4
3
3
4
Typ
-
-
15
12
Symbol
1
2
3
1
2
3
1
2
3
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
18
15
006aaa156
006aaa157
006aaa157
Unit
V
V
pF
pF
6
5
4
5
4
5
4
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