PESD3V3V4UG T/R NXP Semiconductors, PESD3V3V4UG T/R Datasheet - Page 10

• Manufacturer Part Number: PESD3V3V4UG T/R
• Description: TVS Diode Arrays 3.3V QUAD ESD PROTCT
• Manufacturer: NXP Semiconductors
• Series: PESDxV4Ur

Specifications of PESD3V3V4UG T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Breakdown Voltage: 5.6 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 18 pF
• Dimensions: 1.35(Max) mm W x 2.2(Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD3V3V4UG,115

NXP Semiconductors
8. Package outline
PESDXV4UF_G_W_3
Product data sheet
Fig 10. Package outline PESDxV4UF (SOT886)
Fig 12. Package outline PESDxV4UW (SOT665)
Dimensions in mm
1.5
1.4
0.5
0.5
0.40
0.32
3
2
1
1.05
0.95
0.6
0.35
0.27
4
5
6
0.25
0.17
1.7
1.5
Dimensions in mm
1.3
1.1
0.50
max
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
5
1
04-07-22
0.5
0.04
max
1.7
1.5
1
2
Fig 11. Package outline PESDxV4UG (SOT353)
2.2
2.0
3
4
Dimensions in mm
0.27
0.17
1.35
1.15
0.3
0.1
5
0.6
0.5
1
0.65
0.18
0.08
PESDxV4UF/G/W
04-11-08
1.3
2.2
1.8
2
3
4
0.3
0.2
0.45
0.15
© NXP B.V. 2008. All rights reserved.
0.25
0.10
1.1
0.8
04-11-16
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