IS61NLP25636A-200B3LI ISSI, Integrated Silicon Solution Inc, IS61NLP25636A-200B3LI Datasheet - Page 17

• Manufacturer Part Number: IS61NLP25636A-200B3LI
• Description: IC SRAM 9MBIT 200MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP25636A-200B3LI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-FBGA
• Density: 9Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 280mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 165
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
SLEEP MODE ELECTRICAL CHARACTERISTICS
SLEEP MODE TIMING
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. G
07/28/2010
Symbol
I
t
t
t
t
Sb
PdS
PuS
ZZI
rZZI
2
CLK
ZZ
Isupply
All Inputs
(except ZZ)
Outputs
(Q)
Parameter
Current during SLEEP MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SLEEP current
ZZ inactive to exit SLEEP current
Deselect or Read Only
ZZ setup cycle
t
ZZI
t
PDS
I
SB2
1-800-379-4774
High-Z
Conditions
ZZ ≥ V
Ih
Min.
2
2
2
0
t
Deselect or Read Only
RZZI
ZZ recovery cycle
t
PUS
Max.
60
Don't Care
operation
Normal
cycle
cycle
cycle
cycle
Unit
mA
ns
17