IS61NLP25636A-200B3LI ISSI, Integrated Silicon Solution Inc, IS61NLP25636A-200B3LI Datasheet - Page 13

• Manufacturer Part Number: IS61NLP25636A-200B3LI
• Description: IC SRAM 9MBIT 200MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP25636A-200B3LI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-FBGA
• Density: 9Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 280mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 165
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
DC ELECTRICAL CHARACTERISTICS
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. G
07/28/2010
Symbol Parameter
I
I
I
I
cc
Sb
SbI
Sb
Symbol
V
V
V
V
I
I
lI
lo
V
oh
ol
Ih
Il
2
SS
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
cMoS Input
Sleep Mode
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
dd
– 0.2V.
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
ZZ>V
All Inputs ≤ 0.2V or ≥ V
f = 0
dd
dd
In
≤ V
= Max.,
= Max.,
Ih
Il
Ih
SS
, f = Max.
Test Conditions
I
I
I
I
V
V
, ZZ ≤ V
oh
oh
ol
ol
SS
SS
+ 0.2V or ≥V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
Il
kc
or ≥ V
In
ouT
Il
min.
,
≤ V
(Over Operating Range)
≤ V
Ih
dd
,
dd
ddq
(1)
dd
(1)
– 0.2V
, OE = V
– 0.2V,
(Over Operating Range)
dd
Temp. range
1-800-379-4774
or V
Ih
Com.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
SS
. It exhibits ±100µA maximum leakage current when tied to ≤
Min.
–0.3
2.4
2.0
–5
–5
—
280
300
100
100
3.3V
x18
70
80
45
50
-250
V
MAX
dd
Max.
0.4
0.8
—
5
5
+ 0.3
280
300
100
100
x36
70
80
45
50
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
270
280
100
100
x18
70
80
45
50
-200
V
MAX
dd
Max.
0.4
0.7
—
5
5
+ 0.3
270
280
100
100
x36
70
80
45
50
Unit
µA
µA
Unit
mA
mA
mA
mA
V
V
V
V
13