IS61NLP25636A-200B3LI ISSI, Integrated Silicon Solution Inc, IS61NLP25636A-200B3LI Datasheet - Page 10

• Manufacturer Part Number: IS61NLP25636A-200B3LI
• Description: IC SRAM 9MBIT 200MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP25636A-200B3LI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-FBGA
• Density: 9Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Package Type: BGA
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 280mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.465V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 165
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP25636A/IS61NVP25636A
IS61NLP51218A/IS61NVP51218A
ASYNCHRONOUS TRUTH TABLE
Notes:
1. X means "Don't Care".
2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data
3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time.
4. Deselected means power Sleep Mode where stand-by current depends on cycle time.
WRITE TRUTH TABLE
Notes:
1. X means "Don't Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK.
10
Operation
Sleep Mode
Read
Write
Deselected
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE ALL BYTEs
WRITE ABORT/NOP
bus contention will occur.
(x18)
ZZ
H
L
L
L
L
WE
H
L
L
L
L
(1)
OE
H
X
X
X
L
Integrated Silicon Solution, Inc. — www.issi.com —
BWa
H
H
X
L
L
I/O STATUS
Din, High-Z
High-Z
High-Z
High-Z
BWb
DQ
H
H
X
L
L
1-800-379-4774
07/28/2010
Rev. G