PESD5V0L4UW T/R NXP Semiconductors, PESD5V0L4UW T/R Datasheet - Page 8

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PESD5V0L4UW T/R

Manufacturer Part Number
PESD5V0L4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0L4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.46 V
Clamping Voltage
13 V
Operating Voltage
5 V
Peak Surge Current
2.5 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
4000
Part # Aliases
PESD5V0L4UW,115
NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 7. V-I characteristics for a unidirectional ESD protection diode
Low capacitance unidirectional quadruple ESD protection diode arrays
Rev. 04 — 28 February 2008
V
CL
V
BR
V
RWM
P-N
+
I
I
I
I
RM
R
PP
PESDxL4UF/G/W
006aaa407
V
© NXP B.V. 2008. All rights reserved.
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