PESD5V0L4UW T/R NXP Semiconductors, PESD5V0L4UW T/R Datasheet - Page 6

• Manufacturer Part Number: PESD5V0L4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.46 V
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0L4UW,115

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Table 9.
T
[1]
[2]
[3]
Symbol Parameter
C
V
r
dif
amb
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
= 25 C unless otherwise specified.
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
Low capacitance unidirectional quadruple ESD protection diode arrays
Rev. 04 — 28 February 2008
…continued
Conditions
f = 1 MHz;
V
I
I
I
I
I
PP
PP
PP
PP
R
R
= 1 mA
= 0 V
= 1 A
= 3 A
= 1 A
= 2.5 A
[1][2][3]
PESDxL4UF/G/W
Min
-
-
-
-
-
-
-
-
Typ
22
16
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
28
19
8
12
10
13
200
100
Unit
pF
pF
V
V
V
V
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