PESD5V0L4UW T/R NXP Semiconductors, PESD5V0L4UW T/R Datasheet - Page 13

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PESD5V0L4UW T/R

Manufacturer Part Number
PESD5V0L4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0L4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.46 V
Clamping Voltage
13 V
Operating Voltage
5 V
Peak Surge Current
2.5 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
4000
Part # Aliases
PESD5V0L4UW,115
NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 14. Reflow soldering footprint PESDxL4UG (SOT353/SC-88A)
Fig 15. Wave soldering footprint PESDxL4UG (SOT353/SC-88A)
Dimensions in mm
4.50
solder lands
solder resist
occupied area
Dimensions in mm
Low capacitance unidirectional quadruple ESD protection diode arrays
2.70
solder lands
solder paste
solder resist
occupied area
0.70
2.35
Rev. 04 — 28 February 2008
0.50
(4 )
transport direction during soldering
2.25
0.50
(4 )
1.15
3.75
2.65
1.20
2.40
PESDxL4UF/G/W
2.65
0.60
(1 )
0.40 0.90
© NXP B.V. 2008. All rights reserved.
0.30
sot353_fr
2.10
1.00
4.00
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